† Corresponding author. E-mail:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0304600, 2017YFA0205700, and 2016YFA0200700), the National Natural Science Foundation of China (Grant Nos. 61774003 and 21673054), the Start-up Funding of Peking University, National Young 1000-talents Scholarship of China, the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, China (Grant No. KF201604), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SYS031).
Metal halide perovskites have been regarded as remarkable materials for next-generation light-harvesting and light emission devices. Due to their unique optical properties, such as high absorption coefficient, high optical gain, low trapping-state density, and ease of band gap engineering, perovskites promise to be used in lasing devices. In this article, the recent progresses of microlasers based on reduced-dimensional structures including nanoplatelets, nanowires, and quantum dots are reviewed from both fundamental photophysics and device applications. Furthermore, perovskite-based plasmonic nanolasers and polariton lasers are summarized. Perspectives on perovskite-based small lasers are also discussed. This review can serve as an overview and evaluation of state-of-the-art micro/nanolaser science.
The laser technique has been successfully used for producing high-power, ultra-fast, and small coherent light sources. The term “laser” stems from an acronym for “light amplification by stimulated emission of radiation”, which can emit coherent light with a strong intensity and superior directionality through a process of optical amplification based on the stimulated emission of electromagnetic radiation.[1–4] Due to the rapid development of nanoscience and nanotechnology, small solid-state lasers, with physical size comparable to the optical wavelength, have been extensively utilized in a variety of fields, such as high-density data storage, optical integration, and high-resolution bio-imaging. [5,6] Inorganic and organic semiconductor nanostructures in the form of nanowires (NWs) and nanoplatelets (NPs) have been considered as active optical microcavities for achieving lasing over the past three decades.[7] Along with technological innovation, combining gain materials with optical cavities (such as photonic crystals or metal-clad cavities) has been deemed a vital method to realize photonic lasing. For instance, Chen et al. successfully realized the single mode, low threshold, and spatially coherent laser operation in the near-infrared region by coupling a semiconductor thin film with photonic crystals.[8] Nevertheless, due to the diffraction limit, the mode and physical dimension of the photonic laser are larger than half of the wavelength of the optical field, which triggers a crucial fundamental challenge to realizing ultra-compact lasers that can directly generate coherent optical fields on a nanometer scale.[9,10] The plasmonic laser, a new class of optical amplification and laser device, has been demonstrated to store electromagnetic field energy in charge density waves.[11,12] A hybrid semiconductor–insulator–metal construction is widely adopted to overcompensate for the losses to realize plasmonic laser, which will be discussed in detail in Section
Metal halide perovskites with the general formula ABX3 or A2BX4 are considered as the most promising materials for future optoelectronics. In 2009, Miyasaka et al. first used the CH3NH3PbI3 (MAPbI3) as a light absorber in solar cells with an initial efficiency of only 3.8%, Then, due to the improvement of materials and interface engineering, the efficiency was enhanced to over 22%.[16–23] The high absorption coefficient, low nonradiative recombination rate, long diffusion length, low density of defect states, and bipolar carrier-transport property make the perovskites family uniquely suitable for photovoltaic applications.[18,24–26] Besides, owing to the outstanding emission properties such as high photoluminescence (PL) quantum yield (QY) and widely-tuned band gap, perovskites have been extensively utilized in the field of optoelectronic devices, such as in light emitting diodes and photo-detectors.[27–29] Moreover, by virtue of high optical gain, perovskites are regarded as an efficient optical gain medium for lasing applications, including photonic lasing, plasmonic lasing, and polariton lasing. For example, Xing et al. first demonstrated the amplification of spontaneous emission (ASE) from a low temperature solution-processed MAPbX3 perovskite thin film in 2014.[30] In addition, through laying MAPbI3 NWs on Ag film with a MgF2 spacer layer, Yu et al. demonstrated Fabry–Pérot (F–P) plasmonic lasers in perovskites.[31] Furthermore, Su et al. realized polariton lasing based on all-inorganic cesium lead chloride (CsPbCl3) perovskite NPs at room temperature.[32] In a nutshell, on the basis of the advantages of low-cost fabrication, perovskite microlasers and nanolasers have crucial potential applications in integrated optics. Hence, we will give a general overview about the rapid process of perovskite-based small laser sources. This paper is mainly divided into six parts to review the current research status of perovskite-based small lasers. In Section
On the basis of their crystalline structure, metal halide perovskites can be mainly classified into two categories. The first one is called a three-dimensional (3D) perovskite, with the general chemical formula ABX3, and the other one is the two-dimensional (2D) or layered perovskite, with the formula A2BX4. In terms of a unit cell, A, B, and X are located at the eight corners, the body center, and the six face centers, respectively, as shown in Fig.
Understanding the underlying mechanism of the energy band structure of perovskites is beneficial to the study of their electron behaviors. Compared with the cation A, the [BX6] octahedron plays an essential role in constructing a perovskite with a minimum value of the conduction band and a maximum value of the valence band. For instance, through utilizing the density functional theory method, Filippetti et al. demonstrated that the minimum value of the conduction band of MAPbI3 is mainly contributed to from p-orbital electrons of Pb atoms and the maximum value of the valence band mainly originates from the s-orbitals of the Pb atoms and the p-orbitals of the I atoms. By contrast, the cation A can only tune the edge band structure via changing the bending and stretching between the Pb and the halogen atoms in the [PbX6] octahedron.[37,38]
In the following section, we primarily discuss three optical properties of perovskite essential for the emission devices. (I) Tunable emission. Owing to the ease of band gap engineering, perovskites have been considered as promising candidates for developing the next-generation multicolor coherent and incoherent light sources.[39–43] By changing the stoichiometry, the emission spectrum can be tuned to cover the whole visible range, as shown in Fig.
Currently, high-quality single-crystal perovskites in the form of NPs and microdisks have been demonstrated as excellent WGM microlasers with 2D optical confinement.[48–51] A variety of significant studies have been done in the past few years. In 2014, Zhang et al. first realized a room-temperature microlaser based on hybrid organic–inorganic perovskite polygonal MAPbI3−x(Cl/Br)x NPs, which are derived from a two-step chemical vapor deposition (CVD) route. The schematic diagrams of hexagonal and triangular perovskite NPs and lasing action are shown in Fig.
![]() | Fig. 2. (color online) (a) Schematic of hexagonal WGM perovskite of CH3NH3PbI3−aXa (X = I, Br, Cl) and the corresponding lasing mode.[52] (b) Schematic of small perovskite lasers based on a WGM cavity with square shape (left panel). The PL emission image from the CsPbBr3 NP above the threshold; the green color shows PL out-coupling from the NP (middle panel). The simulation of the electric field distribution for the square perovskite cavity; the pattern shows that the WGM is supported by the cavity, and the four corners show the stronger out-coupling than that at any other place (right panel).[53] (c) Schematic of a CsPbX3 (X = Cl, Br, or I) NP on mica substrate pumped by 400 nm laser excitation (left panel). Emission spectra with pump fluence increasing from 1.0 μJ·cm−2 to 3.2 μJ·cm−2 (right panel). The FWHM is ∼ 0.15 nm and the “S” curve shows a process from spontaneous emission to lasing. After photoexcitation with pump fluence below P ≈ 0.8 Pth and above threshold (≈ 1.2Pth), TRPL decay kinetics shows an ∼ 3.0 ns spontaneous emission decay process and a <30 ps lasing process, respectively.[53] |
Nevertheless, compared with the hybrid organic–inorganic lead halide perovskites, all-inorganic lead halide perovskites exhibit better stability, larger exciton binding energy, and higher emission efficiency.[52] Zhang et al. demonstrated the high-quality WGM lasing from cesium lead halide square-shaped perovskite NPs, which were synthesized by the one-step vapor-phase van der Waals epitaxial method on a mica substrate in 2016, as shown in Figs.
Considering the further prospects of optoelectronic applications, the arrayed small lasers should be more practical and valuable. Through fabricating patterned lead halide perovskite NPs in periodic arrays on a silicon substrate with micro-patterned BN film as the buffer layer, Liu et al. realized room-temperature high-quality WGM lasing with a threshold of ∼ 11 μJ·cm−2. By shortening the size of the cavity or breaking the symmetry of the cavity, single mode lasing can be achieved.[54] Meanwhile, by positioning a perovskite NP onto a silicon grating, Wang et al. fabricated periodic nanolaser arrays.[55,56] In brief, apart from individual perovskite nanolasers, the development of superior and high-quality integrated perovskite laser arrays may push the preparation of perovskite-based optoelectronic devices into industrial manufacturing.
Compared with other reduced-dimensional structures, NWs are regarded as crucially potential building blocks for future optoelectronic circuits. Semiconductor NWs are perceived as excellent candidates for the realization of miniaturized waveguides and lasers.[57–59] As shown in Fig.
![]() | Fig. 3. (color online) (a) Schematic of perovskite NW F–P cavity laser (upper panel); bright-field optical, spontaneous emission, and lasing images of single CH3NH3PbI3 NWs (middle panel); lasing spectra of single CH3NH3PbI3 NWs (bottom panel).[60] (b) Optical image of CH3NH3PbI3 NWs grown on silicon substrate (upper panel) and lasing spectra of CH3NH3PbI3, CH3NH3PbBr3, and CH3NH3PbIxCl3−x (lower panel).[61] The excitation power is 20 μJ·cm−2, 60 μJ·cm−2, and 11 μJ·cm−2, respectively. (c) SEM images of CsPbBr3 NWs and NPs grown on quartz substrate (upper panel), and power-dependent emission spectra of CsPbBr3 NWs (lower panel).[62] (d) Lasing images of CsPbBr3 NWs directionally grown on sapphire substrate above the lasing threshold (upper panel), and wide range lasing spectra from the directional CsPbX3 and alloy NWs (lower panel).[63] |
The semiconductor QD is a type of nanostructure with a size lower than the Bohr radius in three dimensions, and possess a variety of unique optical and electronic properties due to the quantum confinement effect. Based on the superior characteristics of size tunability and structure flexibility, QDs show large optical oscillator strength, high PLQY, and large extinction coefficients, which promise a bright future in flexible display and communication technologies. Recently, perovskite QDs have also attracted more and more attention in the development of incoherent and coherent light sources.[64–67] In 2015, Protesescu et al. demonstrated all-inorganic CsPbX3 colloidal QDs synthesized by a one-step reaction between PbX2 and Cs-oleate in nonpolar solvent. The PL covers all the visible spectrum via compositional control with the FWHM in a range of 12–42 nm, as shown in Fig.
![]() | Fig. 4. (color online) (a) Picture of CsPbX3 QD in a solution of toluene, which is excited by an ultraviolet lamp; the corresponding PL spectra are the shown in the bottom (left panel). Pump intensity-dependent PL spectra from CsPbBr3 nanocrystal film (right panel), with inset showing transmission electron microscopy of CsPbBr3 nanocrystals.[45,68,69] (b) Power-dependent PL spectra from a thin film of CsPbBr3 QDs, with the inset showing the fabrication of the device, including the excitation beam (EB), cylindrical lens (CL), collection lens set (CLS), and charged coupled device (CCD) (left panel). The integrated PL intensity and FWHM versus pump intensity exhibits a threshold behavior.[69] (c) Power-dependent MAPbI3 perovskite-coated microsphere emission at 80 K, with the inset showing the device’s schematic.[71] (d) Evolution from PL to ASE with increasing pump intensity in a silicon-microsphere resonator embedded with a CsPbBr3 QD.[73] |
The cavity-free solution-processed films provide an effective solution to realizing one-chip laser sources integratable into various substrates. Xing et al. first illustrated the tunable, robust ASE from MAPbX3 (X = Cl, Br, I, and their mixtures) with a striking low threshold of ∼12 μJ·cm−2. By embedding the films into a wide range of cavity resonators, a variety of lasing can be achieved.[74] A photonic crystal is constructed by periodically aligning two media with different dielectric functions, and possesses a widely controllable band gap through changing the period and dielectric functions (Fig.
![]() | Fig. 5. (color online) (a) Schematic of photonic crystal (left panel), and the band structure of the photonic crystal (right panel). (b) SEM image of 2D photonic crystal nanostructured pattern (left panel), and lasing output from perovskite photonic crystal with the pitch in a range of 430–460 nm. Single mode lasing is observed separately at 768.4 nm, 777.3 nm, 788.1 nm, and 795.8 nm (right panel).[8] (c) Schematic diagram of GaN-based DBRs (left panel), and the single mode lasing spectrum varying with pump fluence at 778.4 nm and FWHM of 0.24 nm.[78] (d) Cross-sectional scanning electron micrograph of the DBR laser architecture, consisting of a CH3NH3PbI3 (MAPbI3) film deposited on an 80 nm thick etched alumina grating on a sapphire substrate (left panel), and input–output curve showing the process from spontaneous emission to lasing. The threshold is about 17 kW·cm−2, and the inset indicates that the emission spectrum above the threshold is strongly TE-polarized.[80] |
Hindered by the optical diffraction limit, the physical size of a photonic laser is constrained above half of the light wavelength. Nanolaser devices based on the amplification of surface plasmons by stimulated emission of radiation are utilized to push the dimensions of laser devices into the nanometer region beyond the diffraction limit.[11,13,81–86] Oulton et al. proposed a hybrid plasmonic waveguide for subwavelength confinement and long-range propagation, which consists of a semiconductor NW separated from a metal surface by a nanoscale dielectric gap. Owing to the continuity of the electric displacement near the dielectric spacer layer, the mode of perovskite NW is confined to an ultra-small mode volume in the dielectric gap region. The coupling between the plasmonic and waveguide modes across the gap makes it possible to store optical energy like a capacitor that allows effective subwavelength transmission in a nonmetallic region with low loss, as shown in Fig.
![]() | Fig. 6. (color online) F–P NW plasmonic lasers. (a) Hybrid plasmonic waveguide.[87] (b) Schematic of plasmonic nanolaser: a single CH3NH3PbI3 (MAPbI3) NW on Ag film with a MgF2 spacer layer.[31] (c) Calculated NW mode distribution for MAPbI3 NW on Ag film with a 10 nm MgF2 spacer layer at a wavelength of 790 nm.[31] (d) Calculated effective mode index against NW height for plasmonic and photonic lasing geometry.[31] (e) Emission spectra for different pump intensities, with the inset showing an optical image of the plasmonic lasing NW.[31] |
Comparing with photonic and plasmonic lasing, the concept of polariton lasing was first proposed theoretically in 1996. Unlike photonic lasing accomplished by light amplification through the process of stimulated emission with population inversion, polariton laser based on the Bose–Einstein condensation (BEC) of exciton–polariton is a type of coherent emission without population inversion.[14,32,90–92] In semiconductor microcavities, exciton–polaritons are formed when the interaction time between exciton and polaritons is shorter than their escaping time, which is the so-called strong interaction regime. As shown in Fig.
![]() | Fig. 7. (color online) Polariton lasing based on perovskites. (a) Microcavity consisting of a planar F–P resonator embedded in two reflectors. Excitons in an active layer and cavity photons can strongly couple with each other to generate new quasiparticles, exciton–polaritons. (b) Mechanism of ideal polariton lasing. Under high-energy excitation, polaritons are created and then leave the UPB for the LPB via phonon emission. Next, they leap down mainly through polariton–phonon scattering before reaching the bottleneck region and through polariton–polariton scattering after reaching the bottleneck to relax continuously to the final state k∥ = 0.[90] (c) Energy–wave vector (E–k) dispersion curves of CH3NH3PbBr3 (MAPbBr3) micro/nanowire with a width of 0.32 μm and length of 3.66 μm. The L–T splitting energy (ΔELT) is about 33 meV, which shows the strong coupling strength. The inset shows a normalized electric field distribution |E|2 at the cross-section of each corresponding wire.[15] (d) Lasing emission spectra (green line) and spatially resolved PL spectra (blue line) of a MAPbBr3 wire in the same condition. The red dots displayed in wave vector space with integer values of π/Lz are F–P peaks extracted from spatially resolved PL spectra, which can be fitted with the polariton dispersion curve (red line).[15] (e) Schematic diagram of the microcavity structure, where CsPbCl3 NPs are embedded in two DBR mirrors consisting of 7 and 13 HfO2/SiO2 pairs, respectively.[32] (f) Angle-resolved PL spectrum at high pump fluence of 1.3Pth. Almost all areas around the final state k∥ = 0 are occupied, indicating the realization of the whole polariton condensation.[32] |
Figure
In light of the above, strong exciton–photon coupling is the prerequisite for realizing polariton lasing. Over the past two decades, polariton lasing has been demonstrated in inorganic and organic semiconductors. In the earliest research, CdTe, GaAs, and InP have fulfilled potential in polariton condensation below 70 K due to small exciton binding energy. In a subsequent study, room temperature exciton–polariton lasing was achieved in a ZnO- and GaN-microcavity with much higher oscillator strengths and exciton binding energy.[90,93–97] For organic semiconductors, generally speaking, Frankel excitons exhibit larger exciton binding energy but weaker Coulomb interaction, which is against polariton relaxation. In view of the facts presented above, the perovskite system can combine the advantages of both organic and inorganic materials, such as large exciton binding energy, easy fabrication, low trapping states density, and inter-system transition, to achieve high-performance polariton lasing devices.[98–101]
The exciton–polariton has been observed in the system of perovskites, such as (C6H9C2H4NH3)2PbI4, (C6H5C2H4NH3)2PbI4, and CsPbX3. Figure
Although room temperature, strong exciton–photon coupling in perovskite material has been observed over the past twenty years, the realization of polariton condensation is still a recent breakthrough. In 2017, Su et al. first reported polariton lasing in CsPbCl3 NPs at room temperature.[32] The all-inorganic lead chloride perovskites were grown by epitaxial-free CVD and then dry-transferred to a bottom DBR composed of 13 HfO2/SiO2 pairs. Through standard e-beam evaporation, seven other pairs were deposited continuously over NPs to form a complete DBR microcavity structure (Fig.
Finally, we summarize polariton lasing in perovskites. Strong exciton–photon coupling and polariton condensation are the latest concepts, and related studies are still underway. Light–matter interactions in perovskites have been proved constantly, however, in addition to large coupling strength and high polariton density, the realization of a complete relaxation process is also a key points. Devices based on DBR microcavities or NW F–P cavities are feasible, and how to improve the cavity quality will be the next problem for scientists to achieve novel polariton lasing. As a matter of fact, when under higher pumping, polariton lasing can transform into photonic lasing; hence, this also indicates a better future for polariton lasing.
In this review, we have taken a holistic view to introduce the current status and rapid process of micro-sized and nano-sized lasers based on metal halide perovskites. According to the quantum particles involved in the coherent emission process, lasers are divided into three categories, i.e. photonic lasers, plasmon lasers, and polariton lasers. Due to the excellent properties of high absorption and gain coefficient, low density of trapping states, and tunable emission, metal halide perovskites promise to be used for low-cost, multicolor lasing devices. This is a good opportunity for developing polariton lasing by using perovskite as the gain medium, which is attributed to their large exciton binding energy.
However, challenges still remain. The long-standing problem of poor structural stability due to ionic chemical bonds casts a shadow on practical applications. The 2D structure perovskites exhibit higher stability than their 3D counterparts. The 2D and 3D hybrid structure perovskites provide a solution to the stability issue. Electrical and CW optical pumping is another central challenge to making small perovskite lasers for industrial applications. Although the outstanding electric properties of perovskites have been proven widely in the solar cell research field, small, electrically driven perovskite lasers are rarely explored. The reason for this may lie in the instability of perovskite exposed to air, heat, and organic solvents during the fabrication of microdevices. The high lasing threshold is the other obstacle for electrically driven lasers. Although polariton lasing can reduce the threshold by two–three orders theoretically, the threshold of the as-demonstrated polariton lasers is still quite high. By using MAPbI3, the first CW pumped lasing was developed due to local gain enhancement near the phase transition temperature. However, the underlying physics and universality of the method remain to be confirmed. Interdisciplinary studies on structural engineering, device fabrication, and fundamental photophysics will be helpful for the application of small perovskite lasers.
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